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MTY25N60E

Part Number	MTY25N60E
Manufacturer	Motorola
Description	TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
Published	Sep 29, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect...
Datasheet	MTY25N60E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads.
The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional s...

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MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM - Motorola

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