Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4....
Power
Transistors
2SC5294, 2SC5294A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (Ta=25˚C)
Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +150 Unit
10.0
s Features
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
V
5°
V
1 2 3
2.0
Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package
s Electrical Characteristics
Parameter 2SC5294 Collector cutoff current 2SC5294A 2SC5294 2SC5294A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time
(TC=25˚C)
Symbol Conditions VCB = 1000V, IE = 0 ICBO VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 IEBO hFE VCE(sat) VBE(sat) fT tstg tf VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V IC = 12A,...
