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IRFZ44N Dataheets PDF



Part Number IRFZ44N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFZ44N DatasheetIRFZ44N Datasheet (PDF)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an ex.

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 17.5mΩ ID = 49A S TO-220AB Max. 49 35 160 94 0.63 ± 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Typ. ––– 0.50 ––– Max. 1.5 ––– 62 Units °C/W 1 09/21/10 IRFZ44NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance EAS Single Pulse Avalanche Energy‚ Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 17.5 mΩ VGS = 10V, ID = 25A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 19 ––– ––– S VDS = 25V, ID = 25A„ ––– ––– 25 ––– ––– 250 µA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C ––– ––– 100 nA VGS = 20V ––– ––– -100 VGS = -20V ––– ––– 63 ID = 25A ––– ––– 14 nC VDS = 44V ––– ––– 23 VGS = 10V, See Fig. 6 and 13 ––– 12 ––– VDD = 28V ––– 60 ––– ns ID = 25A ––– 44 ––– RG = 12Ω ––– 45 ––– VGS = 10V, See Fig. 10 „ Between lead, D ––– 4.5 ––– 6mm (0.25in.) nH from package G ––– 7.5 ––– and center of die contact S ––– 1470 ––– VGS = 0V ––– 360 ––– VDS = 25V ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 ––– 530… 150† mJ IAS = 25A, L = 0.47mH Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12) Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 49 A showing the integral reverse G ––– ––– 160 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „ ––– 63 95 ns TJ = 25°C, IF = 25A ––– 170 260 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . 2 www.irf.com I D, Drain-to-Source Current (A) IRFZ44NPbF I D, Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH TJ= 25 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics .


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