Document
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
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PD - 94787B
IRFZ44NPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 17.5mΩ
ID = 49A
S
TO-220AB
Max. 49 35 160 94 0.63 ± 20 25 9.4 5.0
-55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V A mJ V/ns
°C
Typ. ––– 0.50 –––
Max. 1.5 ––– 62
Units °C/W
1 09/21/10
IRFZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 17.5 mΩ VGS = 10V, ID = 25A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA 19 ––– ––– S VDS = 25V, ID = 25A
––– ––– 25 ––– ––– 250
µA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 63
ID = 25A
––– ––– 14 nC VDS = 44V
––– ––– 23
VGS = 10V, See Fig. 6 and 13
––– 12 –––
VDD = 28V
––– 60 ––– ns ID = 25A
––– 44 –––
RG = 12Ω
––– 45 –––
VGS = 10V, See Fig. 10
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
––– 1470 –––
VGS = 0V
––– 360 –––
VDS = 25V
––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 530
150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 49
A showing the
integral reverse
G
––– ––– 160
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
––– 63 95 ns TJ = 25°C, IF = 25A ––– 170 260 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits. This is a calculated value limited to TJ = 175°C .
2
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I D, Drain-to-Source Current (A)
IRFZ44NPbF
I D, Drain-to-Source Current (A)
1000 100
VGS TOP 15V
10V 8.0V
7.0V 6.0V
5.5V 5.0V
BOTTOM 4.5V
1000 100
VGS
TOP 15V 10V 8.0V
7.0V 6.0V
5.5V 5.0V BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ= 25 °C 1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
.