CY7C1487V33

PRELIMINARY CY7C1481V33 CY7C1483V33 CY7C1487V33 2M x 36/4M x 18/1M x 72 Flow-through SRAM Features Supports 133-MHz bus operations 2M x 36/4M x 18/1M x 72 common I/O Fast clock-to-output times — 5.5 ns (for 150-MHz device) — 6.5 ns (for 133-MHz device) — 7.5 ns (for 117-MHz device) — 8.5 ns (for 100-MHz device) Single 3.3V –5% and +5% power supply VDD Separate VDDQ for 3.3V or 2.5V Byte Write Enable and Global Write control Burst Capability—linear or interleaved burst order Automatic power-down available using ZZ mode or CE deselect JTAG boundary scan for BGA packaging version Available in 119-ball bump BGA and 100-pin TQFP packages (CY7C1481V33 and CY7C1483V33). 209 BGA package for CY7C1487V33 165-ball FBGA and 209-ball BGA will only be offered on an opportunity basis (check with Cypress sales and marketing) SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, BWe, BWf, BWg and BWh, BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and Burst Mode Control (MODE). The data outputs (Q), enabled by OE, are also asynchronous. Addresses and chip enables are registered with either Address Status ...