IRFR13N15D

PD - 93905A SMPS MOSFET Applications High frequency DC-DC converters IRFR13N15D IRFU13N15D HEXFET® Power MOSFET l VDSS 150V RDS(on) max 0.18Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR13N15D I-Pak IRFU13N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 14 9.8 56 86 0.57 ± 30 3.8 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through … are on page 10 www.irf.com 1 6/29/00 IRFR13N15D/IRFU13N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/...