SMPS MOSFET
PD - 94245
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR15N20D IRFU15N20D
HEXFET® Power MOSFET
l
VDS...
Description
PD - 94245
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR15N20D IRFU15N20D
HEXFET® Power MOSFET
l
VDSS
200V
RDS(on) max
0.165Ω
ID
17A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D-Pak IRFR15N20D
I-Pak IRFU15N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation* Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
17 12 68 140 3.0 0.96 ± 30 8.3 -55 to + 175 300 (1.6mm from case )
Units
A
W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.04 50 110
Units
°C/W
Notes through
are on page 10
www.irf.com
1
7/25/01
IRFR/U15N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––...
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