IRFR1N60A

PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IRFR1N60A IRFU1N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 7.0Ω ID 1.4A D-Pak IRFR1N60A I-Pak IRFU1N60A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 1.4 0.89 5.6 36 0.28 ± 30 3.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l Low Power Single Transistor Flyback Notes  through … are on page 9 www.irf.com 1 3/7/03 IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 7.0 Ω VGS = 10V, ID = 0.84A „ 4.0 V VDS = VGS, I...