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EMF18 Dataheets PDF



Part Number EMF18
Manufacturers Rohm
Logo Rohm
Description Power management (dual transistors)
Datasheet EMF18 DatasheetEMF18 Datasheet (PDF)

EMF18 / UMF18N Transistors Power management (dual transistors) EMF18 / UMF18N 2SA1774 and DTC144EE are housed independently in a EMT or UMT package. !Application Power management circuit !External dimensions (Units : mm) EMF18 0.22 (4) (5) (6) (3) (2) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F18 !Structure Silicon epitaxial planar transistor UM.

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EMF18 / UMF18N Transistors Power management (dual transistors) EMF18 / UMF18N 2SA1774 and DTC144EE are housed independently in a EMT or UMT package. !Application Power management circuit !External dimensions (Units : mm) EMF18 0.22 (4) (5) (6) (3) (2) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F18 !Structure Silicon epitaxial planar transistor UMF18N (4) 0.65 1.3 0.65 0.7 0.9 (3) 0.5 0.5 0.5 1.0 1.6 0.2 1.25 (3) (2) (1) 2.1 0.15 DTr2 R2 (4) R1 Tr1 0.1Min. 0to0.1 ROHM : UMT6 EIAJ : SC-88 (5) R1=47kΩ R2=47kΩ (6) Abbreviated symbol :F18 !Packaging specifications Type EMF18 UMF18N EMT6 UMT6 Package F18 F18 Marking T2R TR Code 3000 Basic ordering unit (pieces) 8000 (1) !Equivalent circuits (6) Each lead has same dimensions 2.0 (5) (2) 1/4 EMF18 / UMF18N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −60 −50 −6 −150 150 (TOTAL) 150 −55~+150 Unit V V V mA mW °C °C ∗ ∗ 120mW per element must not be exceeded. DTr2 Limits Parameter Symbol 50 VCC Supply voltage −10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V mA mA mW °C °C ∗1 ∗2 !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4 Max. − − − −0.1 −0.1 −0.5 560 − 5 Unit V V V µA µA V − MHz pF IC = −50µA IC = −1mA IE = −50µA VCB = −60V VEB = −6V IC/IB = −50mA/−5mA VCE = −6V, IC = −1mA VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz Conditions DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. − 3.0 − − − 68 − 32.9 0.8 Typ. − − 100 − − − 250 47 1.0 Max. 0.5 − 300 180 500 − − 61.1 1.2 Unit V V mV µA nA − MHz kΩ − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA − − VCE=10V, IE=−5mA, f=100MHz ∗ 2/4 EMF18 / UMF18N Transistors !Electrical characteristic curves Tr1 -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta = 100°C 25°C -20 −40°C -10 -5 -2 -1 -0.5 -0.2 -0.1 VCE = −6V -10 -35.0 Ta = 25°C -31.5 -28.0 -24.5 -100 Ta = 25°C -500 -450 -400 -350 -300 -8 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5µA IB = 0 -20 -50µA IB = 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 Ta = 25°C VCE = -5V -3V -1V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 100°C 25°C -1 Ta = 25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -0.5 200 200 -40°C -0.2 100 100 IC/IB = 50 -0.1 20 10 50 50 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 Ta = 25°C VCE = -12V 20 Cib 10 -0.5 500 Ta = 25°C f = 1MHz IE = 0A IC = 0A Co b -0.2 200 5 -0.1 Ta = 100°C 25°C -40°C 100 2 -0.05 50 0.5 1 2 5 10 20 50 100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-.


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