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SSM3K05FU

Part Number	SSM3K05FU
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 28, 2005
Detailed Description	SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications · · · ...
Datasheet	SSM3K05FU PDF File

Overview

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications · · · Small package Low on resistance : Ron = 0.
8 Ω max (@VGS = 4 V) : Ron = 1.
2 Ω max (@VGS = 2.
5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 400 800 150 150 -55~150 Unit V V mA Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― SC-70 2-2E1E Note 1: Mounted on FR4 board.
2 (25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu pad: 0.
6 mm ´ 3) Weight: 0.
006 g (typ.
) Marking ...

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SSM3K05FU Silicon N-Channel MOSFET - Toshiba Semiconductor

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