SSM3K16FU

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS 20 V VGSS ±10 V ID 100 mA IDP 200 PD(Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Unit: mm JEDEC JEITA TOSHIBA ― SC-70 2-2E1E 0.6 mm 1.0 mm Marking 3 Equivalent Circuit 3 DS 1 2 1 2 Handling Precaution When handling individual dev...