SSM3J01F

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 Ω (max) (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) VDS VGSS ID IDP PD −30 V ±10 V −700 mA −1400 200 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55~150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1F Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static...