SSM3J02F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch High Speed Switchi...
SSM3J02F
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch High Speed Switching Applications
· · · Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating -30 ±10 -600 -1200 200 150 -55~150 Unit V V mA mW °C °C
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1F
Weight: 0.012 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27
SSM3J02F
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±10 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS =...