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SSM3J02T

Part Number	SSM3J02T
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Published	Sep 28, 2005
Detailed Description	SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switchi...
Datasheet	SSM3J02T PDF File

Overview

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching Applications · · · · Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.
5 Ω (max) (@VGS = −4 V) : Ron = 0.
7 Ω (max) (@VGS = −2.
5 V) Low-voltage operation possible Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating -30 ±10 -1.
5 -3.
0 1250 150 -55 to 150 A Unit V V Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Note1: Mounted on ...

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