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SSM3J13T

Toshiba Semiconductor
Part Number SSM3J13T
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Published Sep 28, 2005
Detailed Description SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Spe...
Datasheet PDF File SSM3J13T PDF File

SSM3J13T
SSM3J13T

Overview
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications · · · Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.
5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 ±8 -3.
0 -6.
0 1.
25 150 -55~150 A Unit V V Drain power dissipation Channel temperature Storage temperature range W °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Note 1: Mounted on FR4 board (25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu pad: 645 mm , t = 10 s...


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