SUR50N03-12P

SUR50N03-12P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A)a 17.5 14.5 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers D TO-252 Reverse Lead DPAK Drain Connected to Tab G D S G Top View Ordering Information: SUR50N03-12P—E3 SUR50N03-12P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TC = 25_C TA = 25_C TA = 25_C TA = 100_C IDM IS IAS EAS PD TJ, Tstg ID Symbol VDS VGS Limit 30 "20 47 17.5 12.4 40 5 30 45 46.8 6.5a −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72774 S-32695—Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 18 40 2.6 Maximum 23 50 3.2 Unit _C/W 1 SUR50N03-12P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage...