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STG719

ST Microelectronics

LOW VOLTAGE 4ohm SPDT SWITCH

STG719 Datasheet Low voltage 4 Ω SPDT switch SOT23-6L Maturity status link STG719 Order code Package SOT23-6L Tape...


ST Microelectronics

STG719

File Download Download STG719 Datasheet


Description
STG719 Datasheet Low voltage 4 Ω SPDT switch SOT23-6L Maturity status link STG719 Order code Package SOT23-6L Tape and reel STG719STR Features High speed: – tPD = 0.3 ns (typ.) at VCC = 5 V – tPD = 0.4 ns (typ.) at VCC = 3.3 V Low power dissipation: – ICC = 1 μA (max.) at TA = 25 °C Low on resistance: – RON = 4 Ω (max. TA = 25 °C) at VCC = 5 V – RON = 6 Ω (typ.) at VCC = 3 V Wide operating voltage range: – VCC (OPR) = 1.8 V to 5.5 V single supply Description The STG719 is a high-speed S.P.D.T. (single pole double throw) switch developed thanks to silicon gate C²MOS technology. It is designed to operate from 1.8 V to 5.5 V, making this device ideal for portable applications, audio signal routing, video switching, mobile and communication systems. It offers 4 Ω on-resistance max. at 5 V 25 °C and very low on-resistance flatness. Additional key features are fast switching speed (tON = 7 ns, tOFF = 4.5 ns), break before make delay time and low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. It is available in the commercial and extended temperature range. DS1904 - Rev 10 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Pin connection Figure 1. Pin connection and IEC logic symbols STG719 Pin connection Figure 2. Input equivalent circuit Pin n° 1 4, 6 5 2 3 Symbol IN S1, S2 D VCC GND Table 1. ...




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