N-CHANNEL IGBT
®
STGB3NB60HD
N-CHANNEL 3A - 600V TO-263 PowerMESH™ IGBT
T YPE STGB3NB60HD
s
V CES 600 V
V CE(sat) < 2.8 V
IC 3 A
...
Description
®
STGB3NB60HD
N-CHANNEL 3A - 600V TO-263 PowerMESH™ IGBT
T YPE STGB3NB60HD
s
V CES 600 V
V CE(sat) < 2.8 V
IC 3 A
s s s s s s
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
D2PAK TO-263 (Suffix ”T4”)
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature
o o
Value 600 ± 20 6 3 24 70 0.56 -65 to 150 150
Un it V V A A A W W /o C
o o
C C
() Pulse width limited by max. junction temperature
June 1999
1/8
STGB3NB60HD
THERMAL DATA
R thj -case R thj -amb R thc-sin...
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