N-CHANNEL IGBT
®
STGD7NB120S-1
N-CHANNEL 7A - 1200V IPAK Power MESH™ IGBT
PRELIMINARY DATA
T YPE STGD7NB120S-1
s
V CES 1200 V
V CE(...
Description
®
STGD7NB120S-1
N-CHANNEL 7A - 1200V IPAK Power MESH™ IGBT
PRELIMINARY DATA
T YPE STGD7NB120S-1
s
V CES 1200 V
V CE(sat) < 2.1 V
IC 7 A
s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s INRUSH CURRENT LIMITATION s MOTOR CONTROL
3 2 1
IPAK TO-251 (Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 1200 20 ± 20 10 7 20 55 0.4 -65 to 150 150
Un it V V V A A A W W /o C
o o
C C
() Pulse width limited by safe operating area
April 2000
1/6
STGD7NB120S-1
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5
o o
C/W C/W o C/W
ELECT...
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