STGE200NB60S

STGE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH™ IGBT TYPE STGE200NB60S s s s s s VCES 600 V VCE(sat) (typ.) 1.2 V 1.3 V IC 150 A 200 A TC 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY ISOTOP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LOW FREQUENCY MOTOR CONTROLS s ALUMINUM WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 ±20 200 150 400 600 4.8 – 65 to 150 150 Unit V V A A A W W/°C °C °C ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 1/9 STGE200NB60S THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.208 30 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Col...