STGP12NB60HD

STGP12NB60HD N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT TYPE STGP12NB60HD s s s s s s s s VCES 600 V VCE(sat) < 2.8 V IC 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT ANTIPARALLEL DIODE 3 1 2 TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 24 12 96 100 0.8 –65 to 150 150 Unit V V V A A A W W/°C °C °C ( ) Pulse width limited by safe operating area July 2003 1/9 STGP12NB60HD THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max The...