STGB12NB60KD

STGP12NB60KD - STGB12NB60KD N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP12NB60KD STGB12NB60KD s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C IC(#) @ 100°C < 2.8 V < 2.8 V 18 A 18 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS CO-PACKAGED ANTIPARALLEL DIODE 3 1 2 3 1 TO-220 D2PAK s DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS s UPS INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STGP12NB60KD STGB12NB60KDT4 MARKING GP12NB60KD GB12NB60KD PACKAGE TO-220 D2PAK PACKAGING TUBE TAPE & REEL December 2003 1/11 STGP12NB60KD - STGB12NB60KD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#) Collector Current (pulsed) Short Circuit Withstand Total Dissipation ...