STGW12NB60H

® STGW12NB60H N-CHANNEL 12A - 600V TO-247 PowerMESH™ IGBT PRELIMINARY DATA T YPE STGW 12NB60H s V CES 600 V V CE(sat) < 2.8 V IC 12 A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT 1 2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 ± 20 24 12 96 120 0.96 -65 to 150 150 Unit V V V A A A W W /o C o o C C () Pulse width limited by safe operating area June 1999 1/8 STGW12NB60H THERMAL DATA R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-...