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STGY40NC60VD

ST Microelectronics

IGBT

STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE STGY40NC60VD s s Fi...


ST Microelectronics

STGY40NC60VD

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Description
STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE STGY40NC60VD s s Figure 1: Package IC @100°C 50 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION 2 1 Max247 Weight: 4.96gr ± 0.01 Max Clip Pressure: 150 N/mm2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. Figure 2: Internal Schematic Diagram APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s MOTOR DRIVERS s Table 2: Order Codes SALES TYPE STGY40NC60VD MARKING GY40NC60VD PACKAGE Max247 PACKAGING TUBE Rev.8 July 2004 1/11 STGY40NC60VD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) IF PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C (#) Collector Current (continuous) at 100°C (#) Collector Current (pulsed) Diode RMS Forward Current at TC =25°C Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operati...




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