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MRF6S23100Hxx

Freescale Semiconductor

RF Power Dield Effect Transistors


Description
Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems. Typical 2 - Carrier W - CDMA Performa...



Freescale Semiconductor

MRF6S23100Hxx

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