PMBFJ620

PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s s s s Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain. 1.3 Applications s AM input stage in car radios s VHF amplifiers s Oscillators and mixers. 1.4 Quick reference data Table 1: Per FET VDS VGSoff IDSS Ptot yfs drain-source voltage gate-source cut-off voltage drain current total power dissipation forward transfer admittance VDS = 10 V; ID = 1 µA VGS = 0 V; VDS = 10 V Ts ≤ 90 °C VDS = 10 V; ID = 10 mA −2 24 10 ±25 −6.5 60 190 V V mA mW mS Quick reference data Conditions Min Typ Max Unit Symbol Parameter Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Discrete pinning information Description source (1) source (2) gate (2) drain (2) drain (1) gate (1) 1 2 3 SOT363 Simplified outline 6 5 4 Symbol 5 1 4 2 sym034 6 3 3. Ordering information Table 3: Ordering information Package Name PMBFJ620 Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: PMBFJ620 [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ...