Power MOSFET
PD - 93936A
SMPS MOSFET
IRFR3706 IRFU3706
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converter...
Description
PD - 93936A
SMPS MOSFET
IRFR3706 IRFU3706
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
9.0mΩ
ID
75A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3706
I-Pak IRFU3706
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 12 75 53 280 88 44 0.59 -55 to + 175
Units
V V A W W mW/°C °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.7 50 110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
www.irf.com
1
7/6/00
IRFR/U3706
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Vo...
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