HEXFET Power MOSFET
PD - 94712
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isol...
Description
PD - 94712
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
HEXFET® Power MOSFET
IRFR3709Z IRFU3709Z
Qg
17nC 6.5m:
VDSS RDS(on) max
30V
D-Pak IRFR3709Z
I-Pak IRFU3709Z
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 86 61
Units
V A
f f
340 79 39 0.53 -55 to + 175 W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.9 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
www.irf.com
1
06/23/03
IRFR/U3709Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshol...
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