AUTOMOTIVE MOSFET
PD - 94740
AUTOMOTIVE MOSFET
IRFR3710Z IRFU3710Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technolo...
Description
PD - 94740
AUTOMOTIVE MOSFET
IRFR3710Z IRFU3710Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 100V
G S
RDS(on) = 18mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D-Pak IRFR3710Z
I-Pak IRFU3710Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
Max.
56 39 42 220 140
Units
A
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested )
W W/°C V mJ A mJ
d
0.95 ± 20
IAR EAR TJ TSTG
Avalanche Current
Ã
h
150 200 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
°C 300 (1.6mm ...
Similar Datasheet