Power MOSFET
PD- 94061
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Teleco...
Description
PD- 94061
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
l
IRFR3711 IRFU3711
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
6.5mΩ
ID
110A
D-Pak IRFR3711
I-Pak IRFU3711
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 110 69 440 2.5 120 0.96 -55 to + 150
Units
V V A W W mW/°C °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.04 50 110
Units
°C/W
Notes through are on page 10
www.irf.com
1
2/7/01
IRFR/U3711
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-t...
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