Document
PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 30V RDS(on) = 0.031Ω
G
ID = 33A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
33
21
120 57 0.45 ± 20 95 18 5.7 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
––– ––– –––
Max.
2.2 50 110
Units
°C/W
8/25/97
IRFR/U3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 30 ––– ––– 2.0 9.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.032 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 99 16 28 4.5 7.5 750 400 140
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.031 Ω VGS = 10V, ID = 18A 4.0 V VDS = VGS, I D = 250µA ––– S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 29 ID = 18A 7.3 nC VDS = 24V 13 VGS = 10V, See Fig. 6 and 13 ––– VDD = 15V ––– I D = 18A ns ––– RG = 13Ω ––– RD = 0.8Ω, See Fig. 10 Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 33
showing the A G integral reverse ––– ––– 120 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ––– 53 80 ns TJ = 25°C, IF = 18A ––– 94 140 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 590µH
Caculated continuous current based on maximum allowable junction RG = 25Ω , IAS = 18A. (See Figure 12) temperature; Package limitation current = 20A. ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between TJ ≤ 150°C lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U3303
1000
TOP
I D , Drain-to-Source Current (A)
100
BOTTOM
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
10
1
10
0.1
4.5V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.01 0.1
1 0.1
4.5V
1
20µs PULSE WIDTH TJ = 150 °C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 30A
I D , Drain-to-Source Current (A)
10
TJ = 150 ° C
1.5
1.0
TJ = 25 ° C
1
0.5
0.1 4 5 6 7
V DS = 15V 25V 20µs PULSE.