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IRFR3303 Dataheets PDF



Part Number IRFR3303
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFR3303 DatasheetIRFR3303 Datasheet (PDF)

PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF.

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PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 33… 21… 120 57 0.45 ± 20 95 18 5.7 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ. ––– ––– ––– Max. 2.2 50 110 Units °C/W 8/25/97 IRFR/U3303 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– 2.0 9.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.032 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 99 16 28 4.5 7.5 750 400 140 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.031 Ω VGS = 10V, ID = 18A „ 4.0 V VDS = VGS, I D = 250µA ––– S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 29 ID = 18A 7.3 nC VDS = 24V 13 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 15V ––– I D = 18A ns ––– RG = 13Ω ––– RD = 0.8Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact† ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 33… showing the A G integral reverse ––– ––– 120 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 53 80 ns TJ = 25°C, IF = 18A ––– 94 140 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%.  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 590µH … Caculated continuous current based on maximum allowable junction RG = 25Ω , IAS = 18A. (See Figure 12) temperature; Package limitation current = 20A. ƒ ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, † This is applied for I-PAK, LS of D-PAK is measured between TJ ≤ 150°C lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 IRFR/U3303 1000 TOP I D , Drain-to-Source Current (A) 100 BOTTOM I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 1 10 0.1 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 1 0.1 4.5V 1 20µs PULSE WIDTH TJ = 150 °C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 30A I D , Drain-to-Source Current (A) 10 TJ = 150 ° C 1.5 1.0 TJ = 25 ° C 1 0.5 0.1 4 5 6 7 V DS = 15V 25V 20µs PULSE.


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