Power MOSFET
Applications l High frequency DC-DC converters
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Ch...
Description
Applications l High frequency DC-DC converters
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
PD - 94505A
IRFR3410 IRFU3410
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
39mΩ
ID
31A
D-Pak IRFR3410
I-Pak IRFU3410
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C
dv/dt TJ TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Notes through are ...
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