APT30GP60B

APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. TO-247 ® G C C E Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient 100 kHz operation @ 400V, 37A 200 kHz operation @ 400V, 24A SSOA rated G E All Ratings: TC = 25°C unless otherwise specified. APT30GP60B UNIT 600 ±20 ±30 100 49 120 120A @ 600V 463 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 3...