RMBA09501

RMBA09501 May 2004 RMBA09501 Cellular 2 Watt Linear GaAs MMIC Power Amplifier General Description The RMBA09501 is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. Features 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation Small Signal Gain of > 30dB Small outline SMD package Device Absolute Ratings Symbol VDD VGS PRF TC TS Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power (from 50Ω source) Case Operating Temperature Storage Temperature Min Max +10 -5 +5 +85 +100 Units V V dBm °C °C -30 -40 Note: 1. Only under quiescent conditions—no RF applied. ©2004 Fairchild Semiconductor Corporation RMBA09501 Rev. C RMBA09501 Electrical Characteristics2 Parameter Frequency Range Gain (Small Signal) Gain Variation: Over Frequency Range Over Temperature Range Noise Figure Linear Output Power: for CDMA3 OIP35 Idd @ 33dBm Pout – 7V PAE @ 33dBm Pout Input VSWR (50Ω) RF Input Power Drain Voltage (VDD) Gate Voltages (VG1, VG2)4 Quiescent Currents (IDQ1, IDQ2)4 Thermal Resistance (Channel to Case) Rjc Min 869 Typ 35 ±1.5 ±2.5 6 33 43 1.0 28.5 2:1 +1 7.0 -2 150, 400 11 -0.25 Max 894 Units MHz dB dB dB dB dBm dBm A % dBm V V mA °C/W Notes: 2. VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input an...