RMBA19500

RMBA19500 May 2004 RMBA19500 PCS 2 Watt Linear GaAs MMIC Power Amplifier General Description The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. Features 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation Small signal gain of 30dB typ. Small outline SMD package Device Absolute Ratings Symbol Vd Vg PRF TC TS Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power (from 50Ω source) Operating Case Temperature Range Storage Temperature Range Ratings +10 -5 +5 -30 to +85 -40 to +100 Units V V dBm °C °C Note: 1. Only under quiescent conditions—no RF applied. ©2003 Fairchild Semiconductor Corporation RMBA19500 Rev. C RMBA19500 Electrical Characteristics2 Parameter Frequency Range Gain (Small Signal) Over 1930–1990MHz Gain Variation: Over Frequency Range Over Temperature Range Noise Figure Linear Output Power: for CDMA3 OIP34 PAE @ 33dBm Pout Input VSWR (50Ω) Drain Voltage (Vdd) Gate Voltage (VG1, 2 and VG3)5 Quiescent Currents (IDQ1, 2 and IDQ3)5 Thermal Resistance (Channel to Case) RJC Min 1930 Typ 30 ±1.0 ±1.5 6 33 43 24 2:1 7.0 -2 180, 445 11 -0.25 Max 1990 Units MHz dB dB dB dB dBm dBm % V V mA °C/W Notes: 2. VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching...