RB160M-90
Diodes
Schottky barrier diode
RB160M-90
zApplications General rectification z External dimensions (Unit : mm)...
RB160M-90
Diodes
Schottky barrier diode
RB160M-90
zApplications General rectification z External dimensions (Unit : mm)
1.6±0.1 0.15±0.03
z Land size figure (Unit : mm)
1.2 0.85
zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability.
2.6±0.1
3.5±0.2
0～0.1
0.9±0.1 0.8±0.1
PMDU
0.15±0.03
0.8±0.1
0.6
zStructure
0.45 0.6
zConstruction Silicon epitaxial planar
ROHM : PMDU JEDEC : SOD-123 ① Manufacture Date
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 0.05 0.25±0.05
0～0.1
3.5±0.05
8.0±0.2
1.81±0.05
4.0±0.1
φ1.0±0.2 0
2.8±0.05
3.71±0.05 1.05±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter R evers e voltage (repetitive peak) R evers e voltagec(DC) Average rectified forward current Forward current s urge peak （ 60Hz・ 1cyc） J unction tem perature S torage tem perature Mounted on epoxy board. 180 ° Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg Lim its 90 90 1 30 150 -40 to +150 Unit V V A A ℃ ℃
zElectrical characteristics (Ta=25°C)
Param eter Forward voltage Revers e current Sym bol VF IR Min. Typ. Max. 0.73 100 Unit V µA IF =1.0A VR =90V Conditions
3.05
①
1/3
RB160M-90
Diodes
zElectrical characteristic curves (Ta=25°C)
Ta=150℃ 1 Ta=75℃ 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 0.1 Ta=150℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ 1...
