SDB10A40

Semiconductor SDB10A40 Schottky Barrier Diode Features Low power rectified Silicon epitaxial type High reliability Low IR (IR=10uA Typ) Ordering Information Type No. SDB10A40 Marking 10A40 Package Code SOD-106 Outline Dimensions unit : mm 3.8~4.2 2.4~2.8 1.6 2 1 4.6~5.0 0.15~0.25 2 1 1.2~1.4 PIN Connections 1. Anode 2. Cathode KSD-3031-000 1 SDB10A40 Absolute maximum ratings Characteristic Peak reverse voltage Reverse voltage Average Rectified Forward current Non-repetitive peak surge forward current Junction temperature Storage temperature Ta=25°C Symbol VRM VR IF IFSM Tj Tstg Rating 40 40 1.0 30 150 -55~150 Unit V V A A °C °C Electrical Characteristics Characteristic Forward voltage Reverse current Total capacitance Ta=25°C Symbol VF IR CT IF=1A VR=40V Test Condition Min. Typ. Max. 0.5 30 0.55 200 - Unit V µA pF VR=10V, f=1MHZ * Pulse Test : Pulse width ≤250us, Duty ≤ 2% KSD-3031-000 2 SDB10A40 Electrical Characteristic Curves 00 Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics Fig. 3 Total Capacitance Fig. 4 IF – PF Forword Power dissipation KSD-3031-000 3 SDB10A40 These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to t...