DatasheetsPDF.com

MRF6S9060

Part Number	MRF6S9060
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Sep 27, 2005
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N ...
Datasheet	MRF6S9060 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev.
1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg.
, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 21.
4 dB Drai...

Similar Datasheet

MRF6S9045 RF Power Field Effect Transistors - Freescale Semiconductor
MRF6S9060 RF Power Field Effect Transistors - Freescale Semiconductor
MRF6S9060MBR1 RF Power Field Effect Transistors - NXP
MRF6S9060MR1 RF Power Field Effect Transistors - NXP
MRF6S9060NBR1 RF Power Field Effect Transistors - NXP
MRF6S9060NR1 RF Power Field Effect Transistors - NXP

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)