M470L3223DT0

M470L3223DT0 256MB DDR SDRAM MODULE (32Mx64 based on 32Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 Dec. 2001 Rev. 0.0 Dec. 2001 M470L3223DT0 Revision History Revision 0.0 (Dec. 2001) 1. First release. Rev. 0.0 Dec. 2001 M470L3223DT0 M470L3223DT0 200pin DDR SDRAM SODIMM 32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 GENERAL DESCRIPTION The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively. The Samsung M470L3223DT0 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOPII(400mil) packages mounted on a 200pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M470L3223DT0 is Dual In-line Memory Modules and intended for mounting into 200pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. Max Freq. Interface M470L3223DT0-C(L)B3 166MHz(6ns@CL=2.5) M470L3223DT0-C(L)A2 133MHz(7.5ns@CL=2) M470L3223DT0-C(L)B0 133MHz(7.5ns@CL=2.5) M470L3223DT0-C(L)A0 100MHz(10ns@CL=2) Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V SSTL_2 Double...