Document
Agilent IAM-92516 High Linearity GaAs FET Mixer
Data Sheet
Features DC = 5V @ 26 mA (Typ.) RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description
Agilent Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has builtin LO buffer amplifier which requires -3 dBm LO power to deliver an input third order intercept point of 27 dBm. LO port is 50 ohm matched and can be driven differential or single ended while IF port is 200 ohm matched and fully differential. RF port requires external matching network for optimum input return loss and IIP3 performance. RF and LO frequency range coverage from 400 to 3500 MHz and IF coverage is from DC to 300 MHz. This mixer consumes 26 mA of current from a single 5V supply. Conversion loss is typically 6 dB and noise figure is typically 12.5 dB. Excellent output power at 1 dB compression of 9 dBm. LO to IF, LO to RF and RF to IF isolation are greater than 30 dB. The IAM-92516 is ideally suited for frequency up/down conversion for base station radio card receiver and transmitter, microwave link transceiver, MMDS, modulation and demodulation for receiver and transmitter and general purpose resistive FET mixer, which require high linearity. All devices are 100% RF and DC tested.
Pin Connections and Package Marking
• High Linearity: 27 dBm IIP3 • Conversion Loss: 6 dB typical • Wide band operation: 400-3500 MHz RF & LO input DC – 300 MHz IF output • Fully differential or single ended operation • High P1dB: 9 dBm typical • Low current consumption: 5V@ 26 mA typical • Excellent uniformity in product specifications • Small LPCC 3.0 x 3.0 x 0.75 mm package
Notes: Package marking provides orientation and identification “M3” = Device Code “X” = Month code indicates the month of manufacture
• MTTF > 300 years[1] • MSL-1 and lead-free • Tape-and-Reel packaging option available Applications • Frequency up/down converter for base station radio card, microwave link transceiver, and MMDS • Modulation and demodulation for receiver and transmitter • General purpose resistive FET mixer for other high linearity applications
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
Notes: 1. Refer to reliability datasheet for detailed MTTF data. 2. Conform to JEDEC reference outline MO229 for DRP-N
IAM-92516 Absolute Maximum Ratings [1] Parameter
Device Voltage CW RF Input Power[2] CW LO Input Power[2] Channel Temperature Storage Temperature
Units
V dBm dBm °C °C
Absolute Max.
10 +30 20 150 -65 to 150
Thermal Resistance[2,4] θch-c = 47.6°C/W
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions and TA = 25°C. 3. Board (package belly) temperature TB is 25°C. Derate 21 mW/°C for TB > 85°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
Electrical Specifications
TA = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO =1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
FRF FLO FIF Id Gc[3] IIP3[2] NF[3] P1dB [3] RLRF RLLO RLIF ISOLL-R ISOLL-I ISOLR-L
Parameter and Test Condition
Frequency Range, RF Frequency Range, LO Frequency Range, IF Device Current Conversion Loss Input Third Order Intercept Point SSB Noise Figure Output Power at 1 dB Compression RF Port Return Loss LO Port Return Loss IF Port Return Loss LO-RF Isolation LO-IF Isolation RF-IF Isolation
Units
MHz MHz MHz mA dB dBm dB dBm dB dB dB dB dB dB
Min.
400 400 DC 22
Typ.
Max.
3500 3500 300
Std Dev.[1]
26 6
30 6.9
0.89 0.08 0.43
22
27 12.5 9 19 24 21 34 56 33
Notes: 1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product and is intended to be used as an estimate for distribution of the typical specification. 2. IIP3 test condition: FRF1 = 1.91 GHz, FRF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency FLO= 1.7 GHz. 3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.
240 200 160 120 80 40 0 25
200
150
Cpk=3.7 Stdev=0.43
160 120
Cpk=1.5 Stdev=0.89
120
FREQUENCY
Cpk=3.67 Stdev=0.079
FREQUENCY
FREQUENCY
–3 Std
+3 Std
80 60 40 0 22
–3 Std
+3 Std
90
–3 Std
60
+3 Std
30
26
27 IIP3
28
29
24
26 ID
28
30
0 -6.4
-6.2
-6
-5.8
-5.6
-5.4
CONVERSION LOSS
LSL=22.0, Nominal=26.8
LSL=22.0, Nominal=26.0, USL=30.0
LSL=-6.9, Nominal=-6.0
Figure 3. Normal Distribution o.