band AlGaInP laser diode
HL6724MG
AlGaInP Laser Diode
Description
The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (...
Description
HL6724MG
AlGaInP Laser Diode
Description
The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser pointers and optical equipments for amusement.
Features
Visible light output: 670nm Typ Optical output power: 5 mW CW Low operating current: 35 mA Typ Low operating voltage: 2.7 V Max
156
HL6724MG
Absolute Maximum Ratings (TC = 25°C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 5 6* 2 30 –10 to +50 –40 to +85
1
Unit mW mW V V °C °C
1. Pulse condition: Pulse width ≤1µs, duty ≤50%
Optical and Electrical Characteristics (TC = 25°C)
Item Optical output power Threshold current Operating current Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Symbol PO Ith Iop Vop λp θ// θ⊥ Is Min 5 — — — 660 5 22 0.4 Typ — 25 35 — 670 8 30 0.9 Max — 35 50 2.7 680 11 40 2 Unit mW mA mA V nm deg. deg. mA PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW, VR(PD) = 5 V Test Conditions Kink free
157
HL6724MG
Typical Characteristic Curves
158
HL6724MG
Typical Characteristic Curves (cont)
159
HL6724MG
Typical Characteristic Curves (cont)
160
...
Similar Datasheet