Semiconductor
SUR510EF
Epitaxial Planar Type NPN Silicon Transistor
Description Features
• Digital transistor • Two S...
Semiconductor
SUR510EF
Epitaxial Planar Type
NPN Silicon
Transistor
Description Features
Digital
transistor Two SRC1204 chips in SOT-563F package With built-in bias resistors
Ordering Information
Type NO. SUR510EF Marking 9X Package Code SOT-563F
Outline Dimensions
unit : mm
3
R1 R2
2
1
R2
Tr2
R1
Tr1
4
5
6
R1 Tr1 Tr2 47K Ω 47K Ω
R2 47KΩ 47KΩ
PIN Connections 1. Emitter 1 2. Emitter 2 3. Base 2 4. Collector 2 5. Base 1 6. Collector 1
KST-J007-000
1
SUR510EF
Absolute maximum ratings [Tr1,Tr2 :
NPN]
Characteristic
Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25° C)
Symbol
VO VI IO PD TJ TSTG
Ratings
50 40 100 100 150 -55 ~ 150
Unit
V V mA mW °C °C
Electrical Characteristics [Tr1,Tr2 :
NPN]
Characteristic
Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current
(Ta=25° C)
Symbol
IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT
*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min.
80 1.0 -
Typ.
200 0.1 2.8 1.2 200 -
Max.
500 0.3 5.0 0.18
Unit
nA V V V MHz mA
II
* : Characteristic of
Transistor Only
KST-J007-000
2
SUR510EF
Electrical Characteristic Curves
[Tr1, Tr2 :
NPN]
Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF)
Fig. 3 GI - IO
KST-J007-000
3
...