SUR541EF

Semiconductor SUR541EF NPN Epitaxial Planar Silicon Transistor Description Digital transistor Features Two SRC1211 chips in SOT-563F package With built-in bias resistors Ordering Information Type NO. SUR541EF Marking JW Package Code SOT-563F Outline Dimensions unit : mm 3 R1 2 1 Tr2 R1 Tr1 4 5 6 R1 Tr1 Tr2 10KΩ 10KΩ PIN Connections 1. Emitter 1 2. Base 1 3. Collector 2 4. Emitter 2 5. Base 2 6. Collector 1 KST-J023-000 1 SUR541EF Absolute maximum ratings (Tr1, Tr2) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Ta=25°C Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings 50 50 5 100 100 150 -55 ~ 150 Unit V V mA mW °C °C Electrical Characteristics(Tr1, Tr2 : NPN) Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance Collector Cut-off Current Ta=25°C Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=50V, IE=0 Min. Typ. Max. 120 0.1 250 10 500 500 0.3 500 Unit nA nA V MHz KΩ nA R1 ICBO * : Characteristic of Transistor Only KST-J023-000 2 SUR541EF Electrical Characteristic Curves Tr1, Tr2 : NPN Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KST-J023-000 3 SUR541EF These AUK products are intended for usage in general electronic equipments(Office and communication ...