TPCS8104

TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −44 1.1 0.6 31.5 −11 0.11 150 −55 to 150 Unit V V V A Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEDEC W W mJ A mJ °C °C 8 7 6 5 ― ― 2-3R1B JEITA TOSHIBA Weight: 0.035 g (typ.) Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-04-05 TPCS8104 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) R...