SI4330DY

Si4330DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS ID (A) 8.7 7.5 rDS(on) (W) 0.0165 @ VGS = 10 V 0.022 @ VGS = 4.5 V D Notebook − Load Switch − DC/DC Conversion − Auxiliary Voltage D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4330DY—E3 Si4330DY-T1—E3 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 8.7 7.0 "30 1.7 2.0 1.3 Steady State Unit V 6.6 5.3 A 0.9 1.1 0.7 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72184 S-32412—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 45 85 26 Maximum 62.5 110 35 Unit _C/W 1 Si4330DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Dra...