SI1913EDH

Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.490 @ VGS = –4.5 V –20 0.750 @ VGS = –2.5 V 1.10 @ VGS = –1.8 V ID (A) –1.0 –0.81 –0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D D SOT-363 SC-70 (6-LEADS) S1 1 6 D1 3 kW G Lot Traceability and Date Code D2 3 4 S2 Part # Code Marking Code DA XX YY 3 kW G G1 2 5 G2 Top View S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –0.72 IDM IS –0.61 0.74 0.38 –55 to 150 –3 –0.48 0.57 0.30 W _C –0.63 A Symbol VDS VGS 5 secs Steady State –20 "12 Unit V –1.0 –0.88 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71415 S-03175—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W 1 Si1913EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –1...