DatasheetsPDF.com

STTH112 Dataheets PDF



Part Number STTH112
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HIGH VOLTAGE ULTRAFAST RECTIFIER
Datasheet STTH112 DatasheetSTTH112 Datasheet (PDF)

® STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s s 1A 1200 V 175 °C 1.65 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112 DESCRIPTION The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies a.

  STTH112   STTH112


Document
® STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s s 1A 1200 V 175 °C 1.65 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112 DESCRIPTION The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 85°C Tl = 115°C Tl = 125°C IFSM Forward surge current t = 8.3 ms SMA STTH112A SMB STTH112U Value 1200 850 δ =0.5 δ =0.5 δ =0.5 DO-41 SMA SMB DO-41 SMA SMB 20 18 1 Unit V V A A Tstg Tj Storage temperature range Maximum operating junction temperature - 50 + 175 + 175 °C °C January 2003 - Ed: 2 1/6 STTH112/A/U THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA SMB Rth (j-a) Junction to ambient L = 10 mm DO-41 Value 45 30 25 110 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Tests conditions VR = 1200V Tj = 25°C Tj = 125°C VF Forward voltage drop IF = 1 A Tj = 25°C Tj = 125°C To evaluate the maximum conduction losses use the following equation : P = 1.35 x IF(AV) + 0.3 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C Tj = 25°C Min. Typ. Max. 75 500 30 Unit ns ns V 1.17 Min. Typ. Max. 5 50 1.9 1.65 V Unit µA Fig. 1: Conduction losses versus average current. P(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 2: Forward voltage drop versus forward current. IFM(A) 100.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Tj=125°C (maximum values) δ=1 10.0 Tj=125°C (typical values) Tj=25°C (maximum values) 1.0 T IF(AV)(A) δ=tp/T 0.9 1.0 tp 0.1 1.1 1.2 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 3.0 3.5 4.0 4.5 5.0 2/6 STTH112/A/U Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Lleads = 10mm) (DO-41). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-01 1.E+00 1.E+01 δ = 0.2 δ = 0.1 Single pulse δ = 0.5 Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) (SMA). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.5 T 0.2 0.1 δ = 0.2 δ = 0.1 T tp(s) δ=tp/T 1.E+02 tp 0.0 1.E+03 Single pulse tp(s) 1.E+00 1.E+01 δ=tp/T 1.E+02 tp 1.E+03 1.E-01 Fig. 3-3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4)(SMB). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.2 δ = 0.5 0.2 0.1 T δ = 0.1 Single pulse tp(s) 1.E+00 1.E+01 0.0 1.E-01 δ=tp/T 1.E+02 tp 1.E+03 Fig. 4-1: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (DO-41, SMB). Rth(j-a)(°C/W) 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 SMB DO-41 Lleads=10mm Fig. 4-2: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a)(°C/W) 140 130 120 110 100 90 80 70 60 50 40 30 20 SMA S(cm²) 10 0 0.0 0.5 1.0 1.5 2.0 S(cm²) 2.5 3.0 3.5 4.0 4.5 5.0 3/6 STTH112/A/U PACKAGE MECHANICAL DATA SMA DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L FOOTPRINT (in millimeters) 1.65 1.45 2.40 1.45 4/6 STTH112/A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L FOOTPRINT (in millimeters) 2.3 1.52 2.75 1.52 5/6 STTH112/A/U PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C O / B REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B O /D O /D 4.07 2.04 28 0.712 C D 0.863 0.028 0.034 Ordering code STTH112 STTH112A STTH112U STTH112RL s Marking STTH112 H12 U12 STTH112 Package DO-41 SMA SMB DO-41 Weight 0.34 g 0.068 g 0.11 g 0.34 g Base qty 2000 5000 2500 5000 Delivery mode Ammopack Tape & reel Tape & reel Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such informatio.


STTH12003TV STTH112 STTH110


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)