AS165-59

GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS165-59 Features ■ Single Positive Control Voltage (0, +5 V) ■ Base Station Synthesizer Switch ■ High Isolation (45 dB @ 0.9, 1.9 GHz) ■ J1 Port Non-Reflective ■ Miniature Low Cost MSOP-8 Plastic Package PIN 1 MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm) REF. 0.012 (0.30 mm) + 0.006 (0.15 mm) - 0.002 (0.05 mm) Description The AS165-59 SPST IC FET switch is absorptive on the input. The switch features high isolation and low insertion loss. Ideal building block for base station applications where synthesizer isolation is critical. Use in conjunction with the AS164-80 SPDT switch to meet GSM synthesizer switch isolation requirements. 7.0˚ 0.038 (0.95 mm) TYP. 0.030 (0.75 mm) 0.017 (0.43 mm) 0.007 (0.18 mm) ± 0.005 (0.12 mm) 8.0˚ MAX. 0.006 (0.15 mm) 0.002 (0.05 mm) 0.028 (0.70 mm) 0.016 (0.40 mm) Electrical Specifications at 25°C (0, +5 V) Parameter1 Insertion Loss2 Frequency 0.7–1.0 GHz 1.0–2.0 GHz 2.0–2.5 GHz 0.7–2.0 GHz 2.0–2.5 GHz 0.7–1.8 GHz 1.8–2.5 GHz 39 30 Min. Typ. 0.7 0.8 1.2 45 38 1.7:1 1.5:1 1.9:1 1.8:1 Max. 0.9 1.1 1.4 Unit dB dB dB dB dB Isolation VSWR3 Operating Characteristics at 25°C (0, +5 V) Parameter Switching Characteristics4 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 0.7–2.5 GHz For Two-tone Input Power +5 dBm 0.7–2.5 GHz VLow = 0 to 0.2 V @ 20 µA Max. VHigh = +5 V @ 50 µA Max. to ...