Power MOSFET
APT1003RKLL
1000V 4A 3.00Ω
POWER MOS 7
®
R
MOSFET
TO-220
Power MOS 7 is a new generation of low loss, high voltage,...
Description
APT1003RKLL
1000V 4A 3.00Ω
POWER MOS 7
®
R
MOSFET
TO-220
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
G
D
S
Increased Power Dissipation Easier To Drive TO-220 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT1003RKLL UNIT Volts Amps
1000 4 16 ±30 ±40 139 1.11 -55 to 150 300 4 10
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 3.00 100 500 ±100 3 5...
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