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DE375-501N21A

Part Number	DE375-501N21A
Manufacturer	IXYS Corporation
Description	RF Power MOSFET
Published	Sep 24, 2005
Detailed Description	DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz ...
Datasheet	DE375-501N21A PDF File

Overview

DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 Maximum Ratings 500 500 ±20 ±30 25 150 21 30 5 >200 940 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 500 V 25 A 0.
22 Ω 940 W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol RDS(on) PDC DRAIN Tc = 25°C Derate 3.
7W/°C above 25°C Tc = 25°C 425 4.
5 0.
16 0.
36 SD1 SD2 F...

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DE375-501N21A RF Power MOSFET - IXYS Corporation

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