SUP75N03-04

SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G D S G D S Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VGS ID IDM IS IAR EAS EAR PD TJ, Tstg TO-220AB TL Limit "20 75a 75a 250 75 75 280 140 187c 3.7 –55 to 175 300 Unit V A mJ W Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Thr...